CS48N10 - N-Channel Trench Power MOSFET

General Description

The 48N10 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

VDS=70V；ID=103A@ VGS=10V； RDS(ON).

📥 Download Datasheet

CS48N10 n-channel trench power mosfet by CASS - Datasheet Preview

Datasheet Details

Part number	CS48N10
Manufacturer	CASS
File Size	644.22 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CS48N10 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CS48N18	N-Channel Trench Process Power MOSFET	Thinki Semiconductor
CS48N75	N-Channel Trench Process Power MOSFET	Thinki Semiconductor
CS48N78	N-Channel Trench Process Power MOSFET	Thinki Semiconductor
CS48N80	N-Channel Trench Process Power MOSFET	Thinki Semiconductor
CS48N88	N-Channel Trench Process Power MOSFET	Thinki Semiconductor

Other Datasheets by CASS

Part Number	Description
CS48N18	N-Channel Trench Power MOSFET
CS48N75	N-Channel Trench Power MOSFET
CS48N78	N-Channel Trench Power MOSFET
CS48N88	N-Channel Trench Power MOSFET
CS40N27	N-Channel Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel Trench Power MOSFET CS48N10CSN48N10 General Description The 48N10 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=103A@ VGS=10V； RDS(ON)<6.