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CS50N06 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Those devices are suitable for use in PWM, load switching and general purpose applications.

Features

  • VDS=60V; ID=45A RDS(ON).

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Datasheet Details

Part number CS50N06
Manufacturer CASS
File Size 657.63 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS50N06 Datasheet
Additional preview pages of the CS50N06 datasheet.

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Features ● VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● load switching CS50N06 To-220 Top View Schematic Diagram VDS =60V ID = 45A RDS(ON)= 11.5mΩ Package Marking and Ordering Information Device Marking Device Device Package CS50N06 CS50N06 TO-220 Reel Size - Table 1.
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