CS50N06 Description
The CS50N06 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
CS50N06 Key Features
- VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Power switching application
- load switching
- Table 1