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CS55N53 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The CS55N53 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

Features

  • VDS=55V;ID=100A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number CS55N53
Manufacturer CASS
File Size 631.01 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS55N53 Datasheet
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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The CS55N53 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDS=55V;ID=100A@ VGS=10V; RDS(ON)<6.4mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS55N53 To-220 Top View Schematic Diagram VDS = 55V ID = 100A RDS(ON) = 5.0mΩ Package Marking and Ordering Information Device Marking Device Device Package CS55N53 CS55N53 TO-220 Reel Size - Table 1.
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