CS55N50 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .

Features

VDS=55V; ID=105A@ VGS=10V; RDS(ON).

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CS55N50 N-Channel Trench Power MOSFET by CASS - Datasheet Preview — Datasheet preview – CS55N50

Datasheet Details

Part number	CS55N50
Manufacturer	CASS
File Size	620.86 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CS55N50 Datasheet
Additional preview pages of the CS55N50 datasheet.

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CS55N50 N-Channel Trench Power MOSFET General Description The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS55N50 CS55N50 TO-220 Reel Size - Table 1.

Published: Jun 23, 2018 |