CASS CS55N50
The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | CS55N50 |
|---|---|
| Datasheet | CS55N50 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .FEATURES
● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS55N50 CS55N50 TO-220 Reel Size - Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation
