CASS CSJ60N62A
The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | CSJ60N62A |
|---|---|
| Datasheet | CSJ60N62A Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.FEATURES
● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CSJ60N62 /CSJ60N62A To-263 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ Package Marking and Ordering Information Device Device Marking Device Package CSJ60N62 CSJ60N62 TO-263 CSJ60N62A CSJ60N62 TO-263 Package Typ Tape&Reel Tube Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Not
