CSJ60N62A
CSJ60N62A is N-Channel Trench Power MOSFET manufactured by CASS.
- Part of the CSJ60N62 comparator family.
- Part of the CSJ60N62 comparator family.
Description
The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
Features
- VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
CSJ60N62 /CSJ60N62A
To-263 Top View
Schematic Diagram
VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ
Package Marking and Ordering Information
Device
Device Marking
Device Package
CSJ60N62
CSJ60N62
TO-263
CSJ60N62
TO-263
Package Typ Tape&Reel Tube
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse)
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed...
