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CSJ60N62 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.

Features

  • VDS=60V；ID=80A@ VGS=10V； RDS(ON).

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Datasheet Details

Part number CSJ60N62
Manufacturer CASS
File Size 658.00 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSJ60N62 Datasheet
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N-Channel Trench Power MOSFET General Description The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching. Features ● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CSJ60N62 /CSJ60N62A To-263 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ Package Marking and Ordering Information Device Device Marking Device Package CSJ60N62 CSJ60N62 TO-263 CSJ60N62A CSJ60N62 TO-263 Package Typ Tape&Reel Tube Table 1.
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