CASS CSJ75N62
The CSJ75N62 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | CSJ75N62 |
|---|---|
| Datasheet | CSJ75N62 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.FEATURES
● VDS=75V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test To-263 Top View Schematic Diagram Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply VDS = 75 V ID = 92A RDS(ON) = 6.2 mΩ Package Marking and Ordering Information Device Device Marking Device Package CSJ75N62 CSJ75N62 TO-263 CSJ75N62A CSJ75N62 TO-263 Package Typ Tape&Reel Tube Quantity 800pcs 50pcs Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
