CSJ75N62
CSJ75N62 is N-Channel Trench Power MOSFET manufactured by CASS.
Description
The CSJ75N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.
Features
- VDS=75V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
To-263 Top View
Schematic Diagram
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
VDS = 75 V ID = 92A
RDS(ON) = 6.2 mΩ
Package Marking and Ordering Information
Device
Device Marking
Device Package
TO-263
CSJ75N62A
TO-263
Package Typ Tape&Reel Tube
Quantity 800pcs 50pcs
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse)
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note...
