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CSJ75N62 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The CSJ75N62 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.

Features

  • VDS=75V; ID=92A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number CSJ75N62
Manufacturer CASS
File Size 653.15 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSJ75N62 Datasheet
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CSJ75N62/CSJ75N62A N-Channel Trench Power MOSFET General Description The CSJ75N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=75V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test To-263 Top View Schematic Diagram Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply VDS = 75 V ID = 92A RDS(ON) = 6.2 mΩ Package Marking and Ordering Information Device Device Marking Device Package CSJ75N62 CSJ75N62 TO-263 CSJ75N62A CSJ75N62 TO-263 Package Typ Tape&Reel Tube Quantity 800pcs 50pcs Table 1.
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