CSJ60N53
CSJ60N53 is N-Channel Trench Power MOSFET manufactured by CASS.
Description
The CSJ60N53 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features
- VDS=60V；ID=92A@ VGS=10V； RDS(ON)<6.6mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
To-263 Top View
Schematic Diagram
VDS = 60V ID = 92A
RDS(ON) = 5.5mΩ
Package Marking and Ordering Information
Device
Device Marking
Device Package
TO-263
Package Typ Tape&Reel
Quantity 800pcs
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse)
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt
Peak Diode...
