CASS CSJ60N53
The CSJ60N53 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | CSJ60N53 |
|---|---|
| Datasheet | CSJ60N53 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.FEATURES
● VDS=60V；ID=92A@ VGS=10V； RDS(ON)<6.6mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CSJ60N53 To-263 Top View Schematic Diagram VDS = 60V ID = 92A RDS(ON) = 5.5mΩ Package Marking and Ordering Information Device Device Marking Device Package CSJ60N53 CSJ60N53 TO-263 Package Typ Tape&Reel Quantity 800pcs Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Rec
