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2N1711 Datasheet PDF

Continental Device India 2N1711

NPN SILICON PLANAR TRANSISTOR

Part No. 2N1711
Datasheet 2N1711 Download
Manufacturer
Continental Device India
Description NPN SILICON PLANAR TRANSISTOR
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2N1711 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCER VCBO VEBO PD PD Tj, Tstg VALUE 50 75 7.0 800 4.57 3.0 17.15 - 65 to +200

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCER VCBO VEBO IC=1mA, RBE <10 Ω IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=5V, IC=0 DC Current Gain hFE IC=0.01mA, VCE=10V IC=0.1mA, VCE=10V IC=10mA, VCE=10V IC=10mA, VCE=10V, Ta=
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