Datasheet Details
| Part number | 2N1711 |
|---|---|
| Manufacturer | CDIL |
| File Size | 70.87 KB |
| Description | NPN SILICON PLANAR TRANSISTOR |
| Download | 2N1711 Download (PDF) |
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| Part number | 2N1711 |
|---|---|
| Manufacturer | CDIL |
| File Size | 70.87 KB |
| Description | NPN SILICON PLANAR TRANSISTOR |
| Download | 2N1711 Download (PDF) |
|
|
|
Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCER VCBO VEBO PD PD Tj, Tstg VALUE 50 75 7.0 800 4.57 3.0 17.15 - 65 to +200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCER VCBO VEBO IC=1mA, RBE <10 Ω IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=5V, IC=0 DC Current Gain hFE IC=0.01mA, VCE=10V IC=0.1mA, VCE=10V IC=10mA, VCE=10V IC=10mA, VCE=10V, Ta=
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N1711 | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
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2N1711 | NPN medium power transistor | Philips |
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2N1711 | SWITCHES AND UNIVERSAL AMPLIFIERS | STMicroelectronics |
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2N1711 | NPN Low Power Silicon Transistor | VPT |
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2N1711 | Silicon Planar Epitaxial Transistors | Comset Semiconductor |
| Part Number | Description |
|---|---|
| 2N1613 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N1893 | NPN SILICON PLANAR TRANSISTORS |