Continental Device India 2N1711
NPN SILICON PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCER VCBO VEBO PD PD Tj, Tstg VALUE 50 75 7.0 800 4.57 3.0 17.15 - 65 to +200ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCER VCBO VEBO IC=1mA, RBE <10 Ω IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=5V, IC=0 DC Current Gain hFE IC=0.01mA, VCE=10V IC=0.1mA, VCE=10V IC=10mA, VCE=10V IC=10mA, VCE=10V, Ta=