2N1711 - NPN SILICON PLANAR TRANSISTOR

Product Overview

CDIL

Datasheet Details

Part number	2N1711
Manufacturer	CDIL
File Size	70.87 KB
Description	NPN SILICON PLANAR TRANSISTOR
Datasheet	2N1711 Datasheet
Additional preview pages of the 2N1711 datasheet.

2N1711 Product details

Description

Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCER VCBO VEBO PD PD Tj, Tstg VALUE 50 75 7.0 800 4.57 3.0 17.15 -

📁 Similar Datasheet

2N1711 - NPN LOW POWER SILICON TRANSISTOR (Microsemi)
2N1711 - NPN medium power transistor (Philips)
2N1711 - SWITCHES AND UNIVERSAL AMPLIFIERS (STMicroelectronics)
2N1711 - NPN Low Power Silicon Transistor (VPT)
2N1711 - Silicon Planar Epitaxial Transistors (Comset Semiconductor)
2N1711 - GENERAL PURPOSE TRANSISTOR (Motorola)
2N1711 - NPN TRANSISTOR (Central Semiconductor)
2N1711 - Bipolar NPN Device (Seme LAB)
2N1711 - SILICON PLANAR NPN BIPOLAR TRANSISTOR (TT)
2N1711S - NPN Low Power Silicon Transistor (VPT)

Other Datasheets by CDIL

2N1613 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N1893 - NPN SILICON PLANAR TRANSISTORS

Published: Jun 6, 2017 |