| Part number | 2N1711 |
|---|---|
| Datasheet | 2N1711-CDIL.pdf |
| File Size | 70.87 KB |
| Manufacturer | Continental Device India |
| Description | NPN SILICON PLANAR TRANSISTOR |
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Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCER VCBO VEBO PD PD Tj,.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N1711 | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
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2N1711 | NPN medium power transistor | Philips |
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2N1711 | SWITCHES AND UNIVERSAL AMPLIFIERS | STMicroelectronics |
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2N1711 | NPN Low Power Silicon Transistor | VPT |
 |
2N1711 | Silicon Planar Epitaxial Transistors | Comset Semiconductor |
See all Continental Device India datasheets
| Part Number | Description |
|---|---|
| 2N1613 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N1893 | NPN SILICON PLANAR TRANSISTORS |
