Continental Device India 2N1893
NPN SILICON PLANAR TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total DeviceDissipation @ Ta=25ºC Derate Above 25ºC Total Deivice Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) VALUE 80 100 120 7.0 0.5 0.8 4.57 3.0 17.2 -65 to +200 219 58.3 UNITS V V V V A W mW/ºC W mW/ºC ºC ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER(sus) IC=100mA,RBE =10Ω Collector Emitter Sustaining Voltage BVCEO(sus