Philips 2N1893
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N1893 |
|---|---|
| Datasheet | 2N1893 Download |
| Manufacturer |  Philips |
| Description | NPN medium power transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 500 mA)● Low voltage (max. 80 V).
APPLICATIONS
● High performance amplifiers● Oscillator and switching applications. 1 handbook, halfpage 2 2N1893 PINNING PIN 1 2 3 emitter base collector, connected to case
DESCRIPTION
3 2DESCRIPTION
NPN medium power transistor in a TO-39 metal package. 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain Tcase ≤ 25 °C IC = 150 mA; VCE = 10 V open emitter open base CONDITIONS − − − − 40 MIN. MAX. 120 80 1 3 120 UNIT V V A W 1997 Apr 17 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current...
