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2N2102 - NPN Silicon Transistor

General Description

Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCER VCBO

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Datasheet Details

Part number 2N2102
Manufacturer CDIL
File Size 92.24 KB
Description NPN Silicon Transistor
Datasheet download datasheet 2N2102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 65 80 120 7.0 1.0 1.0 5.71 5.0 28.