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2N2102 Datasheet PDF

Continental Device India 2N2102

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. 2N2102
Datasheet 2N2102 Download
Manufacturer
Continental Device India
Description NPN Silicon Transistor
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2N2102 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 65 80 120 7.0 1.0 1.0 5.71 5.0 28.6 - 65 to +200 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case **Rth (j-a) Rth (j-c) 175 35

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL TEST CONDITION Collector Emitter Voltage VCER IC=1mA, RBE=10 Ω Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEX VCBO VEBO IC=100µA, VEB=1.5V IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=5V, IC=0 DC Current Gain hFE IC=0.1mA, VCE=10V *IC=10mA, VCE=1...
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