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2N2102 Datasheet PDF

Comset Semiconductor 2N2102

The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments.
Part No. 2N2102
Datasheet 2N2102 Download
Manufacturer
Comset Semiconductor
Description Silicon Planar Epitaxial NPN transistor
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2N2102 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO VCBO VCER VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current Value 65 120 80 7 1 1 5 -65 to 200 Unit V V V V A W °C Total Power Dissipation Junction Temperature Storage Temperature range Tamb= 25°C Tcase= 25°C THERMAL CHARACTERISTICS Symbol RthJ-c Rthj-a Ratings Thermal Resistance, Junction-case thermal resistance from junction to ambient in free air Value 35 175 Unit °C/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - NPN 2N2102

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICBO IEBO VCBO VCEO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*) Test Condition(s) VCB= 60 V IE= 0 VEB= 5 V, IC= 0 IC= 100 µA, IE= 0 IC= 30 mA, IB= 0 IC= 10 µA, VCE= 10 V IC= 0.1 mA, VCE= 10 V IC= 10 mA, VCE= 10 V IC= 150 mA, VCE= 10 V IC= 500 mA, VCE= 10 V IC=...
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