STMicroelectronics 2N2102
The 2N2102 is a silicon Planar Epitaxial NPN )transistor in Jedec TO-39 metal case. It is t(sintended for a wide variety of small-signall and cmedium power applications in military and Produindustrial equipments.DESCRIPTION
TO-39 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VCER VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (RBE ≤ 10Ω) Emitter-Base Voltage (IC = 0) Collector Current Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC Storage Temperature Max. Operating Junction Temperature Value 120 65 80 7 1 1 5 -65 to 175 175 Unit V V V V A W W oC oC December 2002 1/4 2N2102 THERMAL DATA Rthj-case Thermal Resistance Junction-Case Rthj-amb Thermal Resistance Junction-Ambient Max Max 30 oC/W 150 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified