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2N2102 Datasheet PDF

Multicomp 2N2102

This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range.
Part No. 2N2102
Datasheet 2N2102 Download
Manufacturer
Multicomp
Description Transistor
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2N2102 datasheet page 1 preview

DESCRIPTION

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ABSOLUTE MAXIMUM RATINGS

: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 800mW Derate above 25ºC : 4.6mW/ºC Total Device Dissipation (Tc = + 25ºC), Pd : 5W Derate above 25ºC : 28.6mW/ºC Operating Junction Temperature Range, Tj : -65ºC to +200ºC Storage Temperature Range, Tstg : -65ºC to 200ºC Thermal Resistance, Junction-to-Case, Rthjc : 35ºC/W Thermal Resistance, Junction-to-Ambient, Rthja : 175ºC/W Lead Temperature (During Soldering, 1/16" from case, 60sec max), Tl : 300ºC

ELECTRICAL CHARACTERISTICS

: (Ta = +25ºC Unless otherwise specifie
2N2102 page 2 preview