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2N2102 - Transistor

General Description

This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications.

Key Features

  • high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 800mW Derate above 25ºC : 4.6mW/ºC Total Device Dissipation (Tc = + 25ºC), Pd : 5W Derate above 25ºC : 28.6mW/ºC Operating Junction Temperature Range, Tj :.

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Datasheet Details

Part number 2N2102
Manufacturer Multicomp
File Size 361.83 KB
Description Transistor
Datasheet download datasheet 2N2102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 800mW Derate above 25ºC : 4.6mW/ºC Total Device Dissipation (Tc = + 25ºC), Pd : 5W Derate above 25ºC : 28.