Continental Device India 2N3053
NPN SILICON PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range Tj, Tstg Lead Temperature 1/16", + 1/32" from Case for 10s TL 2N3053 40 60 5.0 0.7 5.0 28.6 - 65 to +200 +235 2N3053A 60 80 THERMAL RESISTANCE Junction to Case Rth (j-c) 35ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VCER IC=1mA, RBE=10Ω Collector Base Voltage Emitter Base Voltage VCBO VEBO IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICEX VCE=30V, IE=0, VBE (off