TT 2N3053
MEDIUM POWER SILICON NPN TRANSISTOR
| Part No. | 2N3053 |
|---|---|
| Datasheet | 2N3053 Download |
| Manufacturer |  TT |
| Description | MEDIUM POWER SILICON NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
.● Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitter Voltage 40V VCER Collector – Emitter Voltage RBE = 10Ω 50V VCEX Collector – Emitter Voltage VBE = -1.5V 60V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 0.7A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.71mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 175 35 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
