Continental Device India 2N3439
NPN HIGH VOLTAGE SILICON TRANSISTORS
APPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg C unless otherwise specified)DESCRIPTION
SYMBOL 2N3439 Collector -Emitter Voltage VCEO 350 Collector -Base Voltage VCBO 450 Emitter -Base Voltage VEBO 7.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation@ Ta=25 degC PD 1.0 Derate Above 25 deg C 5.7 Power Dissipation@ Tc=25 degC PD 5.0 Derate Above 25 deg C 28.6 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 175 Junction to Case Rth(j-c) 35ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION Collector -Emitter Vo