• Part: 2N3700
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 122.59 KB
Download 2N3700 Datasheet PDF
Continental Device India
2N3700

Description

SYMBOL VALUE Collector -Base Voltage VCBO 140 Collector -Emitter Voltage VCEO 80 Emitter -Base Voltage VEBO 7.0 Collector Current IC 1.0 Power Dissipation @Ta=25 deg C PD 500 Derate Above 25 deg C 2.85 @TC=25 deg C PD 1.8 Derate Above 25 deg C 10.6 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range Junction to Case Rth(j-c) 70 Junction to Ambient Rth(j-a) 245 DESCRIPTION SYMBOL TEST CONDITION MIN Collector-Cut off Current ICBO VCB=90V, IE=0 - MAX 10 UNIT V V V A mW mW/deg C W mW/deg C deg C deg C/W deg C/W UNIT nA Emitter-Cut off Current Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Emitter (Sat) Voltage Base Emitter (Sat) Voltage DC Current Gain VCB=90V, IE=0 - 10 uA IEBO VCBO VEB=5V, IC=0 IC=100uA, IE=-0 - 10 nA 140 - V VCEO • IC=30mA, IB=0 80 - V VEBO IE=100uA, IC=-0 7.0 - V VCE(Sat) • IC=150mA,IB=15mA - 0.2 V IC=500mA,IB=50mA - 0.5 V VBE(Sat) • IC=150mA,IB=15mA - 1.1 V 2N3700 2N3701 hFE • IC=0.1mA,VCE=10V >50 30-100 IC=10mA,VCE=10V IC=150mA,VCE=10V >90 40-12O 100-300 40-12O IC=500mA,VCE=10V >50 30-100 IC=1A,VCE=10V >15 >15 Tc= -55 deg C IC=150mA,VCE=10V >40 - Continental Device India Limited Data Sheet Page 1 of 3 DESCRIPTION SYMBOL TEST CONDITION 2N3700-01 MIN MAX Dynamic Characteristics Small Signal Current Gain Transition Frequency Input Capacitance Output Capacitance Collector Base Time Constant Noise Figure hfe ft Cibo Cobo rbb'cb'c NF • Pulse Test: Pulse Width =300us, Duty Cycle=1% IC=1mA, VCE=5V f=1KHz VCE=10V,IC=50mA, f=20MHz VCB=10V, f=1MHz f=79.8MHz VCE=10V, IC=100uA RS=1kohms, f=1kHz 2N3700 2N3701 80-400 30-200 100-400 >80 <60 <12 15-400 - <60 <12 25-400 4.0 UNIT MHz pF pF ps dB E A B D K C TO-18 Metal Can Package G 2 1 H 3 L J F All diminsions in mm.