Continental Device India 2N3725
NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS
| Part No. | 2N3725 |
|---|---|
| Datasheet | 2N3725 Download |
| Manufacturer |  Continental Device India |
| Description | NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Power Dissipation @ TA=25º C Derate Above 25º C Power Dissipation@ TC=25º C Derate Above 25º C Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg 2N3724 2N3725 30 50 50 80 6.0 1.0 1.0 5.71 5.0 28.6 - 65 to +200 UNITS V V V A W mW/ º C W mW/ º C ºCELECTRICAL CHARACTERISTICS
(TA=25º C unless specified otherwise)DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current SYMBOL TEST CONDITION VCEO* IC=10mA, IB=0 VCES IC=10µA, VBE=0 VCBO IC=10µA, IE=0 VEBO IE=10µA, IC=0 ICBO VCB=40V, IE=0 VCB=60V, IE=0 2N3724 >30 >50 >50 >6.0 <1.7 - 2N3725 >50 >80 >80 >6.0 <1.7 UNITS V V V V µA µA Collector Cut Off Current Base Current TA=100º C VCB=40V, IE=0 VCB=60V, IE=0 ICES VCE=50V, VEB=0 VCE=80V, VEB=0 IB VCE=50V, VEB=0 VCE=80V, VEB=0 <120 - µA - <120 µA...
