STMicroelectronics 2N3725
The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A.| Part No. | 2N3725 |
|---|---|
| Datasheet | 2N3725 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon Planar Epitaxial transistor |
| Buy | Stock & Price |
DESCRIPTION
Fast switching times are assured because of the high minimum fT (300 MHz) and tight control on storage time. TO-39 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CES V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature Value 80 80 50 6 1 0.8 3.5 – 65 to 200 Unit V V V V A W W °C 1/6 2N3725 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 220 °C/W °C/WELECTRICAL CHARACTERISTICS
(T amb = 25 °C unless otherwise specified) Symbol I CBO V( B R)CBO V (BR)CES V( BR)CE O * V( B R)E BO V CE (s at )* Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V B E = 0) Collector-...
