Datasheet Details
| Part number | 2N3725 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 88.06 KB |
| Description | Silicon Planar Epitaxial transistor |
| Datasheet | 2N3725_STMicroelectronics.pdf |
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Overview: 2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH.
| Part number | 2N3725 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 88.06 KB |
| Description | Silicon Planar Epitaxial transistor |
| Datasheet | 2N3725_STMicroelectronics.pdf |
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The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A.
Fast switching times are assured because of the high minimum fT (300 MHz) and tight control on storage time.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature Value 80 80 50 6 1 0.8 3.5 – 65 to 200 Unit V V V V A W W °C 1/6 2N3725 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 220 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO V( B R)CBO V (BR)CES V( BR)CE O * V( B R)E BO V CE (s at )* Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V B E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Test Conditions V CB = 60 V V CB = 60 V I C = 10 µA I C = 10 µA I C = 10 mA I E = 10 µA IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = = = = = = = = = 10 mA 100 mA 300 mA 500 mA 800 mA 1000 mA 10 mA 100 mA 300 mA 500 mA 800 mA 1000 mA 10 mA 100 mA 300 mA 1000 mA 800 mA 500 mA IB IB IB IB IB IB IB IB IB IB IB IB = 1 mA = 10 mA = 30 mA = 50 mA = 80 mA = 100 mA = 1 mA = 10 mA = 30 mA = 50 mA = 80 mA = 100 mA = = = = = = 1 1 1 5 2 1 V V V V V V T am b = 100 °C 80 80 50 6 0.19 0.21 0.31 0.4 0.5 0.6 0.64 0.75 0.89 0.9 1.0 1.1 30 60 40 25 20 35 3 10 55 35 60 pF pF ns ns 60 90 60 65 40 0.25 0.26 0.4
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