2N3725A Datasheet | Central Semiconductor

2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM PD PD TJ, Tstg 2N3724 50 30 0.8 3.5 2N3725 2N3725A -65 to +200 UNITS V V V A A W W °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3724 2N3725 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IB IB ICBO ICBO ICBO ICBO ICES ICES BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VCE=50V VCE=80V VCB=40V VCB=40V, TA=100°C VCB=60V VCB=60V, TA=100°C VCE=50V VCE=80V IC=10µA IC=10µA IC=10m A IE=10µA IC=10m A, IB=1.0m A IC=100m A, IB=10m A IC=300m A, IB=30m A IC=500m A, IB=50m A IC=800m A, IB=80m A IC=1.0A, IB=100m A IC=10m A, IB=1.0m A IC=100m A, IB=10m A IC=300m A, IB=30m A IC=500m A, IB=50m A IC=800m A, IB=80m A IC=1.0A, IB=100m A - 10 - - - 1.7 - 120 - - - - - 10 - - -...