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2N3867 - PNP Transistor

Download the 2N3867 datasheet PDF. This datasheet also covers the 2N3868 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Peak Base Current Power Dissipation at Tc=25ºC Derate Above 25ºC Power Dissipation at Ta=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj,

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3868-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3867
Manufacturer CDIL
File Size 80.59 KB
Description PNP Transistor
Datasheet download datasheet 2N3867 Datasheet

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Other Datasheets by CDIL

Part Number Description
2N3868 PNP SILICON POWER SWITCHING TRANSISTOR
2N3019 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3020 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3053 NPN SILICON PLANAR TRANSISTOR
2N3053A NPN SILICON PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Peak Base Current Power Dissipation at Tc=25ºC Derate Above 25ºC Power Dissipation at Ta=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg VALUE 60 60 4.0 3.0 10 0.5 6.0 34.3 1.0 5.