2N3867 - PNP Silicon Low Power Transistor

VPT

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350.
TO-5 Package: 2N3867, 2N3868.
TO-39 Package: 2N3867S, 2N3868S.
Designed for High Speed Switching and Amplifier.

2N3867 pnp silicon low power transistor by VPT - Datasheet Preview

Datasheet Details

Part number	2N3867
Manufacturer	VPT
File Size	427.99 KB
Description	PNP Silicon Low Power Transistor
Datasheet	2N3867 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N3867S	PNP Silicon Low Power Transistor
2N3868	PNP Silicon Low Power Transistor
2N3868S	PNP Silicon Low Power Transistor
2N3879	NPN Power Silicon Transistor
2N3019	NPN Low Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3867, 2N3867S & 2N3868, 2N3868S PNP Silicon Low Power Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350 • TO-5 Package: 2N3867, 2N3868 • TO-39 Package: 2N3867S, 2N3868S • Designed for High Speed Switching and Amplifier Applications Rev. V3 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current VCB = -40V 2N3867, 2N3867S VCB = -60V 2N3868, 2N3868S IC = -20 mA dc, 2N3867, 2N3867S IC = -20 mA dc, 2N3868, 2N3868S VEB = +2.0 V dc, VCE = -40 Vdc, 2N3867, 2N3867S VEB = +2.0 V dc, VCE = -60 Vdc, 2N3868, 2N3868S VEB = -4.