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2N3866 - RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS

General Description

Silicon NPN transistor, designed for VHF and UHF equipment.

Applications include amplifier; pre-driver, driver, and output stages.

Also suitable for oscillator and frequency-multiplier functions.

Key Features

  • Silicon NPN, To-39 packaged VHF/UHF Transistor.
  • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45%.
  • 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39.

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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N3866 / 2N3866A Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% • 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation Derate above 25ºC Value 30 55 3.5 400 5.0 28.