2N3866
2N3866 is HIGH-FREQUENCY TRANSISTOR manufactured by Motorola Semiconductor.
2N3866 2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
- Collector Current Continuous
Total Device Dissipation Ca Jq = 25°C Derate above 25°C
Storage Temperature
Symbol VCEO VCBO VEBO
'c
T stg
Value 30 55 3.5 0.4 5.0 28.6
-65 to +200
Unit Vdc Vdc Vdc Adc Watts mW/°C
°C
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Rbe = 10 n)
Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, Bl = 0)
Emitter-Base Breakdown Voltage (IE = 100...
