2N3866 - HIGH-FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3866
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	193.20 KB
Description	HIGH-FREQUENCY TRANSISTOR
Datasheet	2N3866 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3866A	HIGH-FREQUENCY TRANSISTOR
2N380	PNP Transistor
2N3800	DUAL PNP SILICON ANNULAR TRANSISTORS
2N3800A	DUAL PNP SILICON ANNULAR TRANSISTORS
2N3801	DUAL PNP SILICON ANNULAR TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO 'c PD T stg Value 30 55 3.5 0.4 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Rbe = 10 n) Collector-Emitter Sustaining Voltage dC = 5.