2N3866 Datasheet

The 2N3866 is a HIGH-FREQUENCY TRANSISTOR.

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Part Number2N3866
ManufacturerMotorola Semiconductor
Overview 2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Stora. .
Part Number2N3866
DescriptionSilicon planar epitaxial overlay transistors
ManufacturerNXP Semiconductors
Overview NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuit. 1 1 Gp (dB) >10 >10 η (%) >45 >50 collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over any 20 ms period up to Tmb = 25 °C IC = 50 mA; VCE = 15 V; f = 200 MHz open collector
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* 500
* 3.5 2.0 0.4 0.4 3.5
* 200 V V A A W.
Part Number2N3866
DescriptionRF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS
ManufacturerMicrosemi
Overview Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. AB.
* Silicon NPN, To-39 packaged VHF/UHF Transistor
* Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45%
* 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and U.
Part Number2N3866
DescriptionNPN SILICON HIGH FREQUENCY TRANSISTOR
ManufacturerAdvanced Semiconductor
Overview The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to. Specifications are subject to change without notice. REV. A 1/1 .

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