Advanced Power Technology 2N3866
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | 2N3866 |
|---|---|
| Datasheet | 2N3866 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
●● Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product
● 1. Emitter 2. Base 3. Collector TO-39
DESCRIPTION
: Silicon NPN transistor, designed for VHF and UHF equipment.APPLICATIONS
include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation Derate above 25º C 5.0 28.6 Watts mW/ º C 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. Datasheet pdf - 2N3866 / 2N3866AELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min.
