Microsemi 2N3866
RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS
2N3866 Specifications
- Package : TO-39
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 400mA
- Frequency : 800MHz
- Collector Base Voltage : 60V
- Collector Emitter Voltage : 30V
- Emitter Base Voltage : 3.5V
- Max Power Dissipation : 1W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N3866 |
|---|---|
| Datasheet | 2N3866 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Silicon NPN, To-39 packaged VHF/UHF Transistor● Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45%
● 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39
DESCRIPTION
: Silicon NPN transistor, designed for VHF and UHF equipment.APPLICATIONS
include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation Derate above 25ºC Value 30 55 3.5 400 5.0 28.6 Unit Vdc Vdc Vdc mA Watts mW/ ºC Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at or contact our factory direct.ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCER BVCEO BVCBO BVEBO ICE...
