Datasheet Details
| Part number | 2N3866 |
|---|---|
| Manufacturer | Advanced Semiconductor |
| File Size | 28.95 KB |
| Description | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Datasheet | 2N3866_AdvancedSemiconductor.pdf |
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Overview: 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39.
| Part number | 2N3866 |
|---|---|
| Manufacturer | Advanced Semiconductor |
| File Size | 28.95 KB |
| Description | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Datasheet | 2N3866_AdvancedSemiconductor.pdf |
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: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.
MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICEX ICEO IEBO hFE VCE(SAT) ft COB GPE ηc IC = 5.0 mA IC = 5.0 mA IC = 100 µA VCE = 55 V VCE = 30 V VCE = 28 V VEB = 3.5 V VCE = 5.0 V IC = 100 mA VCE = 15 V VCB = 28 V VCC = 28 V TC = 25 C O NONE TEST CONDITIONS RBE = 10 Ω VBE = -1.5 V VBE = -1.5 V TC = 200 C O MINIMUM 30 55 3.5 TYPICAL MAXIMUM UNITS V V V 100 500 20 100 µA µA µA --V MHz IC = 50 mA IC = 360 mA IB = 20 mA IC = 50 mA f = 200 MHz f = 1.0 MHz Pout = 1.0 W f = 400 MHz 10 5.0 200 1.0 500 3.0 10 45 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3866 | Silicon planar epitaxial overlay transistors | NXP |
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2N3866 | RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS | Microsemi Corporation |
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2N3866 | HIGH-FREQUENCY TRANSISTOR | Motorola |
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2N3866 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Advanced Power Technology |
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