Datasheet Details
| Part number | 2N4031 |
|---|---|
| Manufacturer | CDIL |
| File Size | 147.39 KB |
| Description | PNP SILICON PLANAR TRANSISTORS |
| Datasheet | 2N4031 2N4030 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4030, 2N4031 2N4032, 2N4033 TO-39 Metal Can Package 2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N4031 |
|---|---|
| Manufacturer | CDIL |
| File Size | 147.39 KB |
| Description | PNP SILICON PLANAR TRANSISTORS |
| Datasheet | 2N4031 2N4030 Datasheet (PDF) |
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SYMBOL 2N4030,32 Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO Collector Current ICM Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range 2N4031, 33 80 80 5 1 800 4.6 4 22.85 -65 to +200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter BreakdownVoltage BVCEO* IC=10mA,IB=0 2N4030, 4032 60 2N4031, 4033 80 MAX Collector Base Breakdown Voltage BVCBO IC=10µA, IE =0 2N4030, 4032 60 2N4031, 4033 80 Emitter Base Breakdown Voltage BVEBO IE=10µA, IC =0 5 Collector Leakage Current ICBO VCB=50V, IE=0 2N4030, 4032 50 2N4030, 4032 VCB=50V, TA=150ºC 50 2N4031, 4033 VCB=60V, IE=0 50 2N4031, 4033 VCB=60V, TA=150ºC 50 Emitter Leakage Current IEBO VEB=5V, IC=0 10 UNITS V V V A mW mW/ºC W mW/ºC ºC UNITS V V V V V nA µA nA µA µA Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR TRANSISTORS 2N4030, 2N4031 2N4032, 2N4033 TO-39 Metal Can Package DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB=15mA IC=500mA,IB=50mA 2N4030, 4032 IC=1A,IB=100mA Base Emitter Saturation Voltage VBE(Sat) * IC=150mA,IB=15mA Base Emitter on Voltage VBE(on) * IC=500mA, VCE=0.5V 2N4030, 4032 IC=1A, VCE=1V DC Current Gain 2N4030, 4031 hFE* IC=100mA, VCE=5V 30 2N4032, 4033 75 2N4030, 4031 IC=100mA,VCE=5V 40 2N4032, 4033 100 2N4030, 4031 IC=500mA,VCE=5V 25 70 2N4030, 4031 IC=100mA,VCE=5V, 15 2N4032, 4033 Ta=-55ºC
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4031 | Silicon Planar Epitaxial PNP Transistor | Comset Semiconductor |
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2N4031 | PNP Silicon Transistor | Micro Electronics |
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2N4031 | PNP Transistor | Central Semiconductor |
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2N4031 | GENERAL PURPOSE TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| 2N4030 | PNP SILICON PLANAR TRANSISTORS |
| 2N4032 | PNP SILICON PLANAR TRANSISTORS |
| 2N4033 | PNP SILICON PLANAR TRANSISTORS |
| 2N4036 | PNP SILICON PLANAR TRANSISTOR |
| 2N4037 | PNP SILICON PLANAR EXPITAXIAL TRANSISTOR |
| 2N4234 | PNP SILICON PLANAR TRANSISTORS |
| 2N4235 | PNP SILICON PLANAR TRANSISTORS |
| 2N4236 | PNP SILICON PLANAR TRANSISTORS |
| 2N4400 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N4401 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |