Continental Device India 2N4033
PNP SILICON PLANAR TRANSISTORS
| Part No. | 2N4033 |
|---|---|
| Datasheet | 2N4033 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL 2N4030,32 Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO Collector Current ICM Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range 2N4031, 33 80 80 5 1 800 4.6 4 22.85 -65 to +200ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector Emitter BreakdownVoltage BVCEO* IC=10mA,IB=0 2N4030, 4032 60 2N4031, 4033 80 MAX Collector Base Breakdown Voltage BVCBO IC=10µA, IE =0 2N4030, 4032 60 2N4031, 4033 80 Emitter Base Breakdown Voltage BVEBO IE=10µA, IC =0 5 Collector Leakage Current ICBO VCB=50V, IE=0 2N4030, 4032 50 2N4030, 4032 VCB=50V, TA=150ºC 50 2N4031, 4033 VCB=60V, IE=0 50 2N4031, 4033 VCB=60V, TA=150ºC 50 Emitter Leakage Current IEBO VEB=5V, IC=0 10 UNITS V V V A mW mW/ºC W mW/ºC ºC UNITS V V V V V nA µA...
