Microsemi 2N4033
PNP SILICON SWITCHING TRANSISTOR
| Part No. | 2N4033 |
|---|---|
| Datasheet | 2N4033 Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC VALUE 80 80 5.0 1.0 2N4029 2N4033 0.5 0.8 -55 to +200 Max. 25.0 1 2 Unit Vdc Vdc Vdc Adc W C TO-18* (TO-206AA) 2N4029 Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RθJC 0 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 4.56 mW/0C for TA > +250C 0 Unit C/W TO-39* (TO-205AD) 2N4033 *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Cutoff Current VCB = 80 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc VBE = 3.0 Vdc Collector-Emitter Cutoff Voltage VBE = 40 Vdc; VCE = 60 Vdc ICBO 10 10 25 10 25 µAdc ηAdc µAdc ηAdc ηAdc IEBO ICEX 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N4029, 2N4033 JAN SERIESELECTRICAL CHARACTERISTICS
(con’t) Characteristics Symbol Min.