DESCRIPTION
: MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS
: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 80 80 5.0 1.0 1.25 7.0 -65 to +200 140 20 ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V ICBO VCB=60V, TA=150°C IEBO VEB=5.0V BVCBO IC=10μA 80 BVCEO IC=10mA 80 BVEBO IE=10μA 5.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(ON) VCE=0.5V, IC=500mA hFE VCE=5.0V, IC=0.1mA 75 hFE VCE=5.0V, IC=100mA 100 hFE VCE=5.0V, IC=500mA 70 hFE VCE=5.0V, IC=1.0A 25 fT VCE=10V, IC=50mA 100 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz ton IC=500mA, IB1=50mA ts IC=500mA, IB1=IB2=50mA tf IC=500mA, IB1=IB2=50mA MAX 50 50 10 0.15 0.50 0.90 1.10 300 400 20 110 1...
Central Semiconductor
