Continental Device India 2N4036
PNP SILICON PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL VALUE Collector -Emitter Voltage VCEO 65 Collector -Base Voltage VCBO 90 Emitter Base Voltage VEBO 7.0 Base Current IB 0.5 Collector Current -Continuous IC 1.0 Power Dissipation @ Tc=25 deg C PD 5.0 Linear Derating Factor 28.6 Power Dissipation @ Ta=25 deg C PD 1.0 Linear Derating Factor 5.72 Operating & Storage Junction Tj, Tstg -65 to +200 Temperature Range Lead Temperature 1/16" from Case TL 230 for 10 Seconds Thermal Resistance Junction to Case Rth (j-c) 35ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION Collector -Emitter Voltage VCEO IC=10mA, IB=0 Collector -Base Voltage VCBO IC=100uA, IE=0 Collector Cut off Current ICEX VCE=85V, VBE=1.5V ICBO VCB=90V, IE=0 Emitter Cut off