Datasheet Details
| Part number | 2N4036 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 62.57 KB |
| Description | Silicon Planar Epitaxial PNP Transistor |
| Datasheet | 2N4036_STMicroelectronics.pdf |
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Overview: 2N4036 MEDIUM-SPEED SWITCH.
| Part number | 2N4036 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 62.57 KB |
| Description | Silicon Planar Epitaxial PNP Transistor |
| Datasheet | 2N4036_STMicroelectronics.pdf |
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The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case.
It is intended particularly as medium speed saturated switch and general purpose amplifier.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CER V CEO V EBO IC IB Pt o t T s t g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 1.5 V) Collector-emitter Voltage (R BE ≤ 200 Ω ) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature Value – 90 – 85 – 85 – 65 – 6 – 1 – 0.5 1 7 – 65 to 200 Unit V V V V V A A W W °C 1/5 2N4036 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 25 175 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I CEO I E BO V( BR)CB O V ( BR) CEX * V (BR)CE R * V (BR)CE O * V (B R)E BO V CE( sat )* VB E * h F E* Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 1.5 V) Collector-emitter Breakdown Voltage (R BE = 200 Ω ) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Voltage DC Current Gain Test Conditions V CB = – 60 V V CE = – 30 V V EB = – 5 V I C = – 100 µA I C = – 10 mA I C = – 10 mA I C = – 10 mA I E = – 100 µA I C = – 150 mA I C = – 150 mA I C = – 0.1 mA I C = – 150 mA I C = – 500 mA I C = – 50 mA f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = – 150 mA I B1 = – 15 mA I B = – 15 mA V CE = – 10 V V CE = – 10 V V CE = – 10 V V CE = – 10 V V CE = – 10 V 60 V E B = – 0.5 V 90 V CB = – 10 V 30 V CC = – 30V 110 ns 700 ns pF pF 20 40 20 – 90 – 85 – 85 – 65 –7 – 0.65 – 1.1 14
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|---|---|---|---|
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2N4036 | General Purpose Transistors | Motorola Inc |
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2N4036 | PNP Transistor | Micro Electronics |
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| Part Number | Description |
|---|---|
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