Datasheet Details
| Part number | 2N4236 |
|---|---|
| Manufacturer | CDIL |
| File Size | 59.20 KB |
| Description | PNP SILICON PLANAR TRANSISTORS |
| Datasheet | 2N4236 2N4234 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4234, 2N4235 2N4236 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N4236 |
|---|---|
| Manufacturer | CDIL |
| File Size | 59.20 KB |
| Description | PNP SILICON PLANAR TRANSISTORS |
| Datasheet | 2N4236 2N4234 Datasheet (PDF) |
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Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Base Current Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IB IC PD PD Tj, Tstg 2N4234 40 40 2N4235 60 60 7.0 200 1.0 1.0 5.7 6.0 34 - 65 to +200 2N4236 80 80 UNIT V V V mA A W mW/ ºC W mW/ ºC ºC THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 29 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Cut Off Current ICEO VCE=30V, IB=0 Collector Cut Off Current VCE=40V, IB=0 VCE=60V, IB=0 ICEX VCE=40V, VEB=1.5V VCE=60V, VEB=1.5V VCE=80V, VEB=1.5V TC=150ºC VCE=30V, VEB=1.5V VCE=40V, VEB=1.5V VCE=60V, VEB=1.5V 2N4234 40 1.0 0.1 2N4235 60 1.0 0.1 2N4236 80 1.0 0.1 UNIT V mA mA mA mA mA mA 1.0 mA 1.0 mA 1.0 mA Collector Cut Off Current Emitter Cut Off Current DC Current Gain ICBO VCB=Rated VCBO, IE=0 IEBO VEB=7V, IC=0 *hFE IC=100mA, VCE=1V IC=250mA, VCE=1V IC=500mA, VCE=1V IC=1A, VCE=1V *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% 2N4234_4236Rev_1 121004E Continental Device India Limited Data Sheet MIN 40 30 20 10 TYP MAX 0.1 mA 0.5 mA 150 Page 1 of 4 PNP SILICON PLANAR TRANSISTORS 2N4234, 2N4235 2N4236 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) SMALL SIGNAL CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Saturation Voltage *VCE (sat) IC=1A, IB=125mA Base Emitter Saturation Voltage *VBE (sat) IC=1A, IB=0.1A Base Emitter On Voltage *VBE (on) IC=250mA, VCE=1V SMALL SIGNAL CHARACTERISTICS Output Ca
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4236 | SILICON PNP TRANSISTORS | Central Semiconductor Corp |
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2N4236 | POWER TRANSISTOR | Motorola |
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2N4236 | Bipolar PNP Device | Seme LAB |
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2N4236 | Bipolar Transistor | Multicomp |
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2N4236 | NPN POWER AMPLIFIER SILICON TRANSISTOR | Microsemi Corporation |
| Part Number | Description |
|---|---|
| 2N4234 | PNP SILICON PLANAR TRANSISTORS |
| 2N4235 | PNP SILICON PLANAR TRANSISTORS |
| 2N4030 | PNP SILICON PLANAR TRANSISTORS |
| 2N4031 | PNP SILICON PLANAR TRANSISTORS |
| 2N4032 | PNP SILICON PLANAR TRANSISTORS |
| 2N4033 | PNP SILICON PLANAR TRANSISTORS |
| 2N4036 | PNP SILICON PLANAR TRANSISTOR |
| 2N4037 | PNP SILICON PLANAR EXPITAXIAL TRANSISTOR |
| 2N4400 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N4401 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |