DESCRIPTION
: A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. MAXIMUM RATINGS
: Characteristic Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TC = +25°C) Total Device Dissipation(TA = +25°C) Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCEO IE IC IB Ptot TJ Tstg RthJC Rating 80 7 1 200 6 1 -65 to +200 29 Unit V A mA W °C °C/W Page <1> 23/04/13 V1.0 Bipolar Transistor ELECTRICAL CHARACTERISTICS
: (TA = +25°C Unless otherwise specified) Parameter Symbol Test Conditions Min ICBO VCB = 80V, IE = 0 Collector Cutoff Current ICEO VCE = 60V, IB = 0 ICEV VCE = 80V, VBE = -1.5V VCE = 60V, VBE = -1.5V, TC = +150°C - Emitter Cutoff Voltage IEBO VEB = 7V, lC = 0 Collector - Emitter Sustaining Voltage VCEO(sus) lC = 100mA, IB = 0, (Note1)...
Multicomp
