Datasheet Details
| Part number | 2N4236 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 237.25 KB |
| Description | Bipolar Transistor |
| Datasheet | 2N4236-Multicomp.pdf |
|
|
Overview: Bipolar Transistor Collector 3 2 Base 1 Emitter.
| Part number | 2N4236 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 237.25 KB |
| Description | Bipolar Transistor |
| Datasheet | 2N4236-Multicomp.pdf |
|
|
|
: A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
Maximum Ratings: Characteristic Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TC = +25°C) Total Device Dissipation(TA = +25°C) Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCEO IE IC IB Ptot TJ Tstg RthJC Rating 80 7 1 200 6 1 -65 to +200 29 Unit V A mA W °C °C/W www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics: (TA = +25°C Unless otherwise specified) Parameter Symbol Test Conditions Min ICBO VCB = 80V, IE = 0 Collector Cutoff Current ICEO VCE = 60V, IB = 0 ICEV VCE = 80V, VBE = -1.5V VCE = 60V, VBE = -1.5V, TC = +150°C - Emitter Cutoff Voltage IEBO VEB = 7V, lC = 0 Collector - Emitter Sustaining Voltage VCEO(sus) lC = 100mA, IB = 0, (Note1) 80 Collector - Emitter Saturation Voltage VCE(sat) lC = 1A, IB = 125mA, (Note1) - Base-Emitter On Voltage VBE VCE = 1V, lC = 250mA DC Current Gain hFE lC = 250mA, VCE = 2V, (Note 1) 30 lC = 1A, VCE = 1V, (Note 1) 10 Transition Frequency ft VCE = 10V, lC = 100mA, f = 1MHz 3 Collector - Base Capactiance Ccbo VCB = 10V, lE = 0, f = 0.1MHz - Small - Signal Current Gain hfe VCE = 10V, lC = 50mA, f = 1kHz 25 Note: 1.
Pulse Duration : %300µs, Duty Cycle %2% Max 100 1 0.1 1 500 0.6 1 150 - 100 - Unit µA mA µA mA µA V - MHz pF - Dimensions A B C D E F G H I J K Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N4236 | SILICON PNP TRANSISTORS | Central Semiconductor Corp |
 |
2N4236 | POWER TRANSISTOR | Motorola |
 |
2N4236 | PNP SILICON PLANAR TRANSISTORS | CDIL |
 |
2N4236 | Bipolar PNP Device | Seme LAB |
 |
2N4236 | NPN POWER AMPLIFIER SILICON TRANSISTOR | Microsemi Corporation |
| Part Number | Description |
|---|---|
| 2N4234 | Bipolar Transistor |
| 2N4235 | Bipolar Transistor |
| 2N4238 | Bipolar Transistor |
| 2N4032 | Power Transistor |
| 2N4037 | Silicon Transistor |
| 2N4401 | General Purpose Switching Transistors |
| 2N4403 | General Purpose Switching Transistors |
| 2N4870 | Unijunction Transistor |
| 2N4871 | Unijunction Transistor |
| 2N4920 | Medium Power Transistor |