Continental Device India 2N5400
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | 2N5400 |
|---|---|
| Datasheet | 2N5400 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 120 130 5.0 600 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage *VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=-0 Collector Cut Off Current ICBO VCB=100V, IE=0 VCB=100V, IE=0, Ta=100ºC Emitter Cut Off Cur
