Continental Device India 2N6519
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | 2N6519 |
|---|---|
| Datasheet | 2N6519 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL 2N6515 2N6516 2N6517 2N6519 2N6520 Collector Emitter Voltage VCEO 250 300 350 Collector Base Voltage VCBO 250 300 350 Emitter Base Voltage VEBO NPN-------------------6------------------ PNP-------------------5------------------ Collector Current Continuous IC 500 Base Current (Continuous) IB 250 Total Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Operating And Storage Junction Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 83.3 UNIT V V V V mA mA mW mW/ºC ºC ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collecto
