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2N6519 - PNP Epitaxial Silicon Transistor

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2N6519 2N6519 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=625mW TO-92 1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature 1. Emitter 2. Base 3.