2N6519 - High Voltage Transistors

onsemi

Datasheet Details

Part number	2N6519
Manufacturer	onsemi
File Size	100.41 KB
Description	High Voltage Transistors
Datasheet	2N6519 Datasheet

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High Voltage Transistors MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VCEO 250 300 350 Vdc VCBO 250 300 350 Vdc VEBO Vdc 6.0 5.0 Base Current Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IB IC PD 250 mAdc 500 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case COLLECTOR 3 RqJA RqJC 200 °C/W 83.