This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6519 |
|---|---|
| Datasheet | 2N6519 2N6515 Datasheet (PDF) |
| File Size | 147.93 KB |
| Manufacturer | Central Semiconductor |
| Description | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
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The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are plementary silicon transistors designed for high voltage driver and amplifier applications. FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=150V ICBO VCB=200V ICBO VCB=250V IEBO VEB=5.0V (NPN) IEBO VEB=4.0V (PNP) BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=10μA (NPN) BVEBO IE=10μA (PNP).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6519 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor |
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2N6519 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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2N6519 | High Voltage Transistor | Micro Commercial Components |
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2N6519 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
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2N6519 | High Voltage Transistors | Motorola |
See all Central Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6515 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6516 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6517 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6518 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6520 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6530 | NPN POWER TRANSISTOR |
| 2N6531 | NPN POWER TRANSISTOR |
| 2N6532 | NPN POWER TRANSISTOR |
| 2N6533 | NPN POWER TRANSISTOR |
| 2N6544 | NPN SILICON POWER TRANSISTOR |
