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2N6517 - NPN Epitaxial Silicon Transistor

Key Features

  • High Voltage Transistor.
  • Collector Dissipation: PC(max) = 625mW.
  • Complement to 2N6520.
  • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage 2N6517 2N6517C 350 400 VCEO Collector-Emitter Voltage 2N6517 2N6517C 350 400 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector.

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2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3.