Fairchild Semiconductor 2N6517
NPN Epitaxial Silicon Transistor
| Part No. | 2N6517 |
|---|---|
| Datasheet | 2N6517 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High Voltage Transistor● Collector Dissipation: PC(max) = 625mW
● Complement to 2N6520
● Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage 2N6517 2N6517C 350 400 VCEO Collector-Emitter Voltage 2N6517 2N6517C 350 400 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 6 500 625 150 -55 ~ 150 Units V V V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta = 25°C unless otherwise noted Symbol Parameter Conditions BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Base Breakdown Voltage 2N6517 IC = 100µA, IE = 0 2N6517C IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage * 2N6517 IC = 1mA, IB = 0 2N6517C IC = 1mA
