2N6517 Datasheet and Specifications PDF

The 2N6517 is a NPN EPITAXIAL SILICON TRANSISTOR.

Key Specifications

PackageTO-92-3
Mount TypeThrough Hole
Pins3
Max Frequency200 MHz
Height8.77 mm
Length4.58 mm
Width3.86 mm
Max Operating Temp150 °C
Part Number2N6517 Datasheet
ManufacturerSamsung Semiconductor
Overview . .
Part Number2N6517 Datasheet
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview 2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Su.
* High Voltage Transistor
* Collector Dissipation: PC(max) = 625mW
* Complement to 2N6520
* Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value VCBO Collect.
Part Number2N6517 Datasheet
DescriptionHigh Voltage Transistor
ManufacturerMicro Commercial Components
Overview MCC Features   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l.   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l Through Hole Package l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Pin Co.
Part Number2N6517 Datasheet
DescriptionNPN Epitaxial Silicon Transistor
Manufactureronsemi
Overview NPN Epitaxial Silicon Transistor 2N6517 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625 mW • Complement to 2N6520 • Suffix “−C” means Center Collector (1. Emitter 2. Collecto.
* High Voltage Transistor
* Collector Dissipation: PC(max) = 625 mW
* Complement to 2N6520
* Suffix “
*C” means Center Collector (1. Emitter 2. Collector 3. Base) 123 TO
*92 3 4.825x4.76 CASE 135AN DATA SHEET 12 3 TO
*92 3 4.83x4.76 LEADFORMED CASE 135AR ABSOLUTE MAXIMUM RATINGS (Valu.

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