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2N6517 - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Key Features

  • 350 Volt VCEO.
  • Gain of 15 at IC=100mA 2N6517 C B E.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 2N6517 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 350 350 6 250 500 680 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).