2N6517
2N6517 is NPN Transistor manufactured by First Silicon.
FEATURES plement To 2N6520
H FF
1 23
DIM A B C D E F G H J L M
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.55 MAX 1.00 1.27 0.85 0.45 14.00 _0.50 2.30 0.51 MAX
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 350 350
6 0.5 625 200 150 -55~+150
Unit V V V A m W ℃/W
℃ ℃
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
DC current gain h FE
- Collector-emitter saturation...
