2N6719 Datasheet PDF | Continental Device India

Continental Device India 2N6719

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	2N6719
Datasheet	2N6719 Download
Manufacturer	Continental Device India
Description	NPN Transistor
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ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL VALUE Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range VCBO VCEO VEBO IC PD PD Tj, Tstg 300 300 7.0 0.5 1.0 2.0 -65 to +150 THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c)

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise) 125 62.5

DESCRIPTION

SYMBOL TEST CONDITION MIN Collector Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter ( Sat) Voltage Base Emitter (on) Voltage VCEO VCBO VEBO ICBO IEBO hFE IC=1mA, IB=0 IC=100µA, IE=0 IE=1mA, IC =0 VCB=200V, IE=0 VEB=6V, IC=0 IC=1mA,VCE=10V IC=10mA,VCE=10V IC=30mA,VCE=10V VCE(sat) IC=30mA,IB=3mA VBE (sat) IC=20mA,IB=2mA VBE (on) IC =30mA, VCE=10V 300...