Continental Device India 2N708
NPN SILICON PLANAR SWITCHING TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC @ Tc=100ºC Derate above 25ºC Derate above 100ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 15 20 40 5.0 200 360 2.1 1.2 680 6.9 6.9 - 65 to +200 THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 145ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCER (sus) IC=30mA, RBE < 10Ω Collector Emitter Sustaining Voltage VCEO (sus) IC=30mA, IB=0 Collector Base Voltage Emitter Base Voltage VCBO VEBO IC=1µA, IE=0 IE=10µA, IC=0 Collector