Microsemi 2N708
NPN SILICON SWITCHING TRANSISTOR
| Part No. | 2N708 |
|---|---|
| Datasheet | 2N708 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation Symbol VCEO VCBO VEBO VCER PT Top, Tstg Value 15 40 5.0 20 0.36 1.2 -65 to +200 Units Vdc Vdc Vdc Vdc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.06 mW/0C for TA > 250C 2) Derate linearly 6.90 mW/0C for TC > 250C TO-18 (TO-206AA)* *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CBO V(BR)EBO V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc Vdc Vdc 25 80 ηAdc ηAdc OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 1.0 µAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE ≤ 10 Ω Collector-Base Cutoff Current VCB = 20 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc 40 5.0 15 20 6 Lake Street, Lawrence, M...